Turbotherm

詳細不明

• https://www.iit2018.org/content/dam/iisb/iit2018/documents/abstbook_iit2018.pdf

  PurionH Turbotherm: High temperature implant option designed for precision and throughput
  
  We introduce a high temperature implant option designed for thermal control while maintaining high throughput. This implanter is able to maintain wafer temperatures up to 200o C during both low and high power implants, for damage control applications. The system is capable of controlling the temperature to within +/- 0.5 degrees during implant, through active, closed-loop control of the heated electrostatic chuck (ESC). System architecture features a wafer pre-heat station and cool down station, allowing uniform heating and cooling of the wafer in atmosphere. This removes much of the overhead associated with heated implants, enabling high wafer throughput without compromised thermal performance.
  
  正確さとスループットとを両立させるための高温イオン注入オプション
  
  

• Purion H | 株式会社SCREENセミコンダクターソリューションズ | 半導体/MEMS/ディスプレイのWEBEXHIBITION（WEB展示会）による製品・サービスのマッチングサービス SEMI-NET（セミネット）

  Purion H3は、Purion Hプラットフォームにおける300mmウェーハ向け主力製品です。
  オプション選択により、低温?70℃・高温200℃での処理も可能となります。